Magnetic Device Engineer

Job description

Position Summary:

The IBM Research team is growing and we are looking for a Magnetic Device Engineer who will be at the forefront of technology for future computing systems.

What are we looking for:

Ideal candidate will have experimental measurement and analysis of patterned magnetic tunnel junctions for STT-MRAM application experience. They will be able to write test code to measure Vc, Ic, Eb, etc. and write analysis code to analyze data. You must be able to analyze data and compare to existing physics models.

It's important that you have the ability to work quasi-independently, e.g. to develop and implement improvements in measurements and analysis techniques, in a team environment consisting of colleagues with different expertise. The ability to clearly communicate technical results to colleagues with different expertise levels is a must have skill.
Auto req ID

138044BR
Required Education

Master's Degree
Role ( Job Role )

Test, Characterization & Diagnostics Eng Prof
State / Province

NEW YORK
Primary job category

Hardware Development & Support
Company

(0147) International Business Machines Corporation
Contract type

Regular
Employment Type

Full-Time
ERBP

Yes
Is this role a commissionable/sales incentive based position?

No
Travel Required

Up to 10% or 1 day a week
IBM Business Group

Research
Preferred Education

Doctorate Degree
City / Township / Village

ALBANY
EO Statement

IBM is committed to creating a diverse environment and is proud to be an equal opportunity employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, gender, gender identity or expression, sexual orientation, national origin, genetics, disability, age, or veteran status. IBM is also committed to compliance with all fair employment practices regarding citizenship and immigration status.
Required Technical and Professional Expertise

Required Skills:
·  Extensive knowledge of magnetic device physics, particularly MTJ devices
·  Experience with pMTJ device development for MRAM
·  Electrical characterization of MTJ device parameters
·  Analysis of electrical characterization data from MRAM arrays
·  Knowledge of magnetic materials, particularly MTJ properties
·  Development of custom electrical test routines for device characterization
·  Applied knowledge of Data analysis and statistical methods
·  Well-developed written and verbal communication skills
Country/Region

United States
Preferred Technical and Professional Experience

Preferred Skills
·  A PhD degree in Physics, Materials Science, Electrical Engineering or a related field with knowledge in magnetism
·  Prior experience - industry or other
·  Micromagnetic simulations, magnetic modeling in general
·  Device reliability modeling and data analysis
Eligibility Requirements

N/A
Position Type

Professional
New Collar Role

No