Research Summer Intern-Neuromorphic Computing
Internship Yorktown Heights (Westchester County) Energy / Materials / Mechanics
Job description
IBM is seeking a Summer Intern with a concentration in neuromorphic device research.
This Summer Intern Project focuses on hardware research for neuromorphic computing using novel non-volatile memory materials and devices. You will be expected to carry out device characterization and analysis independently to contribute in developing novel synaptic elements. You must have hands-on experience in micro-fabrication of memory devices, experience with non-volatile memory material and device characterization, and experience in setting up and performing electrical measurements.
Candidates pursuing a Ph.D. in Electrical Engineering or Physics, along with experience or knowledge in neuromorphic devices and computing are preferred.
The World is Our Laboratory: No matter where discovery takes place, IBM researchers push the boundaries of science, technology and business to make the world work better. IBM Research is a global community of forward-thinkers working towards a common goal: progress.
Auto req ID
86840BR
Required Education
Bachelor's Degree
Role ( Job Role )
Student/Intern
State / Province
NEW YORK
Primary job category
Other
Contract type
Internship
Employment Type
Full-Time
Is this role a commissionable/sales incentive based position?
No
Travel Required
No Travel
IBM Business Group
Research
Preferred Education
Master's Degree
City / Township / Village
YORKTOWN HEIGHTS
EO Statement
IBM is committed to creating a diverse environment and is proud to be an equal opportunity employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, gender, gender identity or expression, sexual orientation, national origin, genetics, disability, age, or veteran status. IBM is also committed to compliance with all fair employment practices regarding citizenship and immigration status.
Required Technical and Professional Expertise
· At least 3 years experience in semiconductor materials, fabrication and device physics
· At least 2 years experience in non-volatile memory device characterization
Country
United States
Preferred Technical and Professional Experience
• At least 1 year experience in neuromorphic device fabrication and characterization
At least 1 year experience in neuromorphic architecture and computation
Secondary Job Category
Unassigned
Eligibility Requirements
· None